Abstract
In this study, a voltage controlled, reproducible, scalable, and cost-effective approach for depositing zinc oxide (ZnO) nanoparticles (NPs), using electrophoretic deposition (EPD) onto p-type silicon (Si) substrates, has been researched and analyzed for its feasibility with respect to electronic device fabrication and fluorescence-based sensors. Our work presents a detailed investigation to evaluate the influence of ZnO morphology, ZnO concentration, and the method of surface treatment applied to the underlying Si substrates, because these pertain to an optimized EPD system. It has been noted that the ZnO NP structures formed directly atop the (3-aminopropyl) triethoxysilane (APTES)-treated Si substrates were more adhesive, thus resulting in a higher yield of NPs over that of comparable depositions on bare silicon. Our observation is that smaller particle sizes of ZnO will increase the energy emission for fluorescence transmission, eliminate several peak emissions, obtain higher fluorescence quantum yield (FQY) efficiency, and require less excitation energy. The results obtained are promising in relation to the integration of EPD in the fabrication of nano biosensors, PV solar cells, nano electronic devices, and thin film transistors (TFTs), where ZnO improves the reliability, affordability, and increased sensitivity needed for the next generation of nanoscale devices and systems.
Highlights
Published: 29 December 2020Nanoparticles and nanostructures are of great interest to the advancement of science and generation technology due to their versatility in nano applications and highly sensitive surfaces [1,2,3,4,5]
We show the study on zinc oxide (ZnO) nanoparticles (NPs) deposited by an electrophoretic deposition system at room temperature without post or pre-deposition annealing at high temperatures
We started our study by optimizing the electrophoretic deposition (EPD) chemical solutions of ZnO precursor in order to obtain smooth, flat microstructures and surfaces with good electrical characteristics and minimum elastic deformation
Summary
Published: 29 December 2020Nanoparticles and nanostructures are of great interest to the advancement of science and generation technology due to their versatility in nano applications and highly sensitive surfaces [1,2,3,4,5]. Wurtzite zinc oxide (ZnO) nanostructures are n-type, II–VI semiconductor films that are of particular interest owing to their direct wide bandgap in the range of (3.3–3.37 eV), with high exciton binding energy around (60 meV) [6], which is higher than GaN, amendable optical properties [7], thermal and chemical stability, excellent biocompatibility and biosensing properties [8], and oxygen storage. Such a high quantity of exciton binding energy would suggest that ZnO has a stable and efficient excitonic emission, even beyond room temperature (RT) [9]. Physical properties of ZnO nanoparticles can be used in sensing, ultraviolent ranges, and thin film transistor
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