Abstract
Silicon-rich nitride (SRN) films that can exhibit an intense white-light emission were fabricated by atmospheric pressure chemical vapor deposition. SRN films were deposited on Si substrates using gaseous SiH2Cl2 (DCS) and NH3 as the source materials for Si and N, respectively. The deposition temperature was kept at 850 °C, and H2 was used as the carrier gas with its flow rate modulated to maintain chamber pressure at 1 atm during the deposition. The optical properties of films obtained at various deposition times from 15 to 60 min were examined by photoluminescence (PL) measurement. An intense luminescence band (1.5–3.5 eV) was observed by the naked eye for all as-deposited samples. Besides, time-resolved PL exhibited a short radiative lifetime of about 1 ns for SRN films. Moreover, high resolution plan-view transmission electron microscopy demonstrated the existence of Si dots in SRN films with the dot sizes ranging from 2 to 6 nm and a dot density of about 4×1012/cm2. On the basis of the results obtained, we considered that the related luminescence mechanism for SRN films is connected to crystalline Si dots produced therein.
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