Abstract
Methylammonium (MA) bismuth iodide ((CH3NH3)3Bi2I9) is a promising perovskite material for solar cell application considering the air stability and the nontoxic lead‐free molecular constitution. However, the further improvement of the device performances is prohibited by the wide bandgap (≈2.1 eV) and unsatisfied crystallinity of the (CH3NH3)3Bi2I9 films. Herein, a developed low‐pressure vapor‐assisted solution process (LP‐VASP) method is applied to obtain the sulfur‐incorporated bismuth‐based perovskites films. Due to the presence of sulfur, both the crystal quality and the energy band property are improved effectively in the as‐fabricated lead‐free perovskite films. After a systematic study of the influence of the reaction time on the device performances, the optimized reaction time is found to be 30 min, under which, the sulfur‐incorporated MA3Bi2I9‐2xSx perovskite films exhibit a reduced bandgap of 1.67 eV and a compact morphology. The corresponding optimal PCE reaches 0.152%. This study provides a new way for the incorporation of sulfur in the lead‐free bismuth‐based perovskite solar cells.
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