Abstract
We report the electrochemical oxidation of Ar-ion bombarded Si(100) by using atomic force microscope (AFM) nanolithography. The changes in the properties of Ar-ion-bombarded Si substrates are investigated with a contact angle goniometer and an AFM surface analyzing tool. The Ar-ionbombarded substrates reveal not only changes in surface morphology and electrical properties but also an enhancement in the AFM lithographic performance. Our result that the height of the oxide features reaches ca. 10 nm is very promising for fabricating devices with nanometer-scale feature by using AFM lithography.
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