Abstract
Ferroelectric bismuth lanthanum titanate (Bi 3.25La 0.75Ti 3O 12; BLT) thin films were deposited on Pt/TiO 2/SiO 2/Si substrate by chemical solution deposition method. The films were crystallized in the temperature range of 600–700 °C. The spontaneous polarization ( P s) and the switching polarization (2 P r) of BLT film annealed at 700 °C for 30 min were 22.6 μC/cm 2 and 29.1 μC/cm 2, respectively. Moreover, the BLT capacitor did not show any significant reduction of hysteresis for 90 min at 300 °C in the forming gas atmosphere.
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