Abstract
The Josephson junction of Nb 3 Ge was fabricated by using a Si(SiO x ) thin film as the tunnel barrier and Pb as a counter electrode. The thickness of the Si barrier is 2 nm, and the junction size is 0.5 × 0.5 mm2. The critical current of the junction was 8 ∼ 12 Acm-2. the normal-state tunneling resistance was 30 \sim 60 \mu \Omega cm 2 . The onset voltage of gap was 5.2 mV. The Shapiro step mode and the Fiske step mode were observed in a well-defined shape. The dependence of maximum dc-Josephson current upon external magnetic field gives the penetration depth of Nb 3 Ge of 130 nm. The dependence of the resonance voltage upon external magnetic field gives the dielectric constant 8.7 of the Si(SiO x ) barrier.
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