Abstract
The heterojunction diode using Sn doped In6Se7 and CuInSe2 thin films are fabricated on FTO coated glass substrates using reactive evaporation technique. The structure of CuInSe2 film is studied using XRD analysis and the film exhibits polycrystalline nature. XPS result confirms that the prepared sample is nearly stoichiometric. The I–V measurements of FTO/n-In6Se7:Sn/p-CuInSe2/Ag heterojunction diode, in dark condition, shows rectification behavior. The knee voltage and ideality factor of the diode are observed to be 1.52 V, 3.09 V and 5.57, 16.16 respectively when the Sn dopant concentration varied from 0.47 at% to 1.57 at%. The absence of photoresponse from the diodes under illumination condition is explained using the energy band structure of the heterojunction.
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