Abstract
We fabricated high-quality domain inverted MgO: LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> structures with 3.0 and 2.0 μm period using applying voltage to the corrugation electrode. We found that keeping the crystal temperature at 150°C for 12 hours before applying voltage was effective for obtaining good uniformity. We also demonstrated application to electro-optic Bragg deflection modulator.
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