Abstract
The performances of top-emission organic light-emitting diodes (TEOLEDs) with various P-dopant (PD) contents in the injection layer were studied by thinning or removing an indium tin oxide (ITO) film sputtered on the anode. On adjusting the thickness of the active TBPDA (N4,N4,N4′,N4′-tetra ([1,1′-biphenyl]-4-yl)-[1,1′-biphenyl]-4,4′-diamine) film used as hole transport layer, the International Commission on Illumination (CIE) coordinates of blue TEOLEDs did not change and the same CIE coordinates (0.14, 0.04) were maintained. The blue index of device I (PD of 3%) without an indium tin oxide (ITO) layer was 139.9 cd/A/CIEy at a current density of 10 mA/cm2. This value was 28% higher than that of the device B (PD of 2%), which had a 15-nm thick ITO film, and 19% higher than that of device E (PD of 2%), which had a 7-nm thick ITO film. Devices B, E, and I achieved similar voltages of approximately 3.9 V. Thus, in the optimized TEOLEDs with suitable PD contents, efficiency was improved by silver without the use of ITO as an anode.
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