Abstract
We have developed a process to fabricate submicron Nb/Al-AlN/Nb junctions using an AlN barrier layer deposited by DC magnetron reactive sputtering, a SiO2 cap-layer and Chemical Mechanical Polishing (CMP) were introduced in the process. Junctions of designed diameters of 0.5–3.0 μm with Jc ranging from 15 to 120 kA/cm2 were fabricated. Jc·t is exponentially dependent on the deposition time (t) of AlN. Nb/Al-AlN/Nb junctions showed lower subgap leakage current than Nb/Al-AlOx/Nb junctions in the high-Jc range. The uniformity of junction parameters over whole 4-inch wafer were also presented. The results indicate that the Nb/Al-AlN/Nb junction is an excellent candidate for superconducting digital applications.
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