Abstract
We have succeeded in improving the superconducting properties of (Hg,Re)Ba 2CaCu 2O y ((Hg,Re)-1212) thin films on (LaAlO 3) 0.3–(SrAl 0.5Ta 0.5O 3) 0.7 (LSAT) substrates. The 300-nm-thick films were fabricated by repeating the two-step process. It was found that the formation reaction for the 1212 phase depends on the amount of Hg-vapor source or the Hg-vapor pressure. 220-nm-thick films were slowly grown on 80-nm-thick seed films in a low Hg-vapor pressure for a long duration of several tens hours (65 h). The films exhibited a flat surface and no appreciable outgrowths. Their T c values were 117–120 K and the J c values in a self-field were 4–6×10 6 A/cm 2 at 77 K. They were substantially higher than those of the films prepared by the previously reported process, i.e. rather fast growth in a high Hg-vapor pressure for several hours (5 h).
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