Abstract
Gallium nitride (GaN) was epitaxially grown on nitrogen doped single layer graphene (N-SLG) substrates using chemical vapour deposition (CVD) technique. The results obtained using x-ray diffractometer (XRD) revealed the hexagonal crystal structure of GaN. Photoluminescence (PL) spectroscopy, energy dispersive x-ray (EDX) spectroscopy and x-ray photoelectron (XPS) spectroscopy revealed traces of oxygen, carbon and nitrogen occurring either as contamination or as an effect of doping during the GaN growth process. In addition, PL revealed a weak yellow luminescence peak in all the samples due to the presence of N-SLG. From the obtained results it was evident that, presence of N-SLG underneath GaN helped in improving the material properties. It was seen from the current–voltage (I–V) response that the barrier height estimated is in good agreement with the Schottky–Mott model, while the ideality factor is close to unity, emphasizing that there are no surface and interface related inhomogeneity in the samples. The photodetector fabricated with this material exhibit high device performances in terms of carrier mobility, sensitivity, responsivity and detectivity. The hall measurement values clearly portray that, the GaN thus grown possess high electron contents which was beneficial in attaining extraordinary device performance.
Highlights
Gallium nitride (GaN) was epitaxially grown on nitrogen doped single layer graphene (N-SLG) substrates using chemical vapour deposition (CVD) technique
It is worth to note that the full width at half maximum (FWHM) value estimated for the GaN epitaxially grown on N-SLG substrates at (0002) plane is around 0.75°, indicating good growth along c-axis
It can be seen from literature that Chung et al attained almost similar FWHM (0.81°) for GaN films grown on CVD g raphene[33]
Summary
Gallium nitride (GaN) was epitaxially grown on nitrogen doped single layer graphene (N-SLG) substrates using chemical vapour deposition (CVD) technique. From the obtained results it was evident that, presence of N-SLG underneath GaN helped in improving the material properties. Poor thermal conductivity of sapphire restricts the usage of GaN in high power and optoelectronic devices[13,14,15,16,17,18,19,20,21,22,23] To overcome these deficiencies, it is beneficial to utilize graphene as an intermediate layer for the growth of GaN. Graphene is chemically doped by substituting nitrogen (N) atoms into the hexagonal crystal lattice to improve its electronic p roperties[31]
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