Abstract

This paper reports a fabrication of doubly-supported free-standing fullerene (C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">60</sub> ) nanowires on MEMS structures to propose an integration process of carbon nano-materials to surface-micromachined silicon devices. By irradiating vacuum-deposited fullerene film with electron beam (EB), polymerized fullerene nanowires were patterned. Then, free-standing structures of the fullerene nanowires were obtained by sacrificial etching using XeF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gas. The fabricated fullerene nanowire was 2 mum long, 400 nm wide and 15 nm thick.

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