Abstract

Low cost single stoichiometric target sputtering of Cu2ZnSnS4 (CZTS) precursor has been adopted to fabricate CZTS solar cells. The effect of a series of deposition pressures and deposition durations on the device performance has been investigated. A 3.74% efficient solar cell has been achieved at a base pressure of 1 × 10−4 Torr with a stoichiometric target, which to the authors’ knowledge, is the record efficiency for such a stoichiometric target.

Highlights

  • Cu2 ZnSnS4 (CZTS) is one of the most promising thin film solar cell absorber candidates owing to its natural earth abundance, direct band gap with the optimal value of 1.45 eV, and its environmentally compatible nature [1,2]

  • A record efficiency of 3.74% was achieved for single stoichiometric target sputtering CZTS solar

  • A record efficiency of 3.74% was achieved for single stoichiometric target sputtering CZTS solar cells at a low processing pressure of 5 mTorr and a short duration of 30 min

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Summary

Introduction

Cu2 ZnSnS4 (CZTS) is one of the most promising thin film solar cell absorber candidates owing to its natural earth abundance, direct band gap with the optimal value of 1.45 eV, and its environmentally compatible nature [1,2]. Sputtering is a low cost option for the production of CZTS solar cells due to the large material usage, uniform large area deposition, and the ease of scale-up [3,4]. Single target sputtering is even cost effective due to the lower power supply required and easier control of the precursor deposition in comparison with multi-target sputtering; it requires less diffusion of elements. Single target sputtering leads to less voids, better film quality, and higher efficiency compared with the co-sputtering technique [5]. The highest efficiency of a single target sputtering CZTS solar cell is 6.48%, with a target composition of Cu:Zn:Sn = 1.68:1.1:1 and sulfurization in a H2 S atmosphere which has proven to be superior to S powder sulfurization [5,6]

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