Fabrication of Cu/Y-MoO3/p-Si type Schottky barrier diodes by facile spray pyrolysis technique for photodetection application

Abstract

The metal-semiconductor interface is a regular multitudinous photoelectric device like Schottky barrier diodes (SBDs) applications. Here we have designed a metal-insulator-semiconductor (MIS) photo detector primarily based on Y-MoO3 film fabricated on p-type Si substrate. The Y-MoO3 film is coated with different Y (5, 10 and 15 wt%) concentrations using the jet nebuliser spray paralysis (JNSP) technique with a glass substrate of a target at 500 °C. XRD pattern of Y-MoO3 film with 15 wt% revealed monoclinic structure with good crystalline nature and improved grain size. FE-SEM photographs of the higher concentrated film exhibited agglomerate nanoplate structures, and the EDAX spectrum confirmed the stoichiometric ratio of O, Mo and Y elements. The UV absorption spectrum displayed comprehensive bandgap energy for a higher concentration of Y (15 wt%). The conductivity (σ) decreased for higher concentration Y-MoO3 thin films elevated values of corresponding activation energy and resistivity. The fabricated Cu/Y-MoO3/p-Si type SBDs have good rectification behaviour of all the diodes, specifically for 15 wt% of Y. The photodiode behaviours of various parameters such as (n) with corresponding (ΦB), (PS), (R), (QE) and (D*) were calculated for light intensities based on the I-V characteristic.