Fabrication of continuous V-grooves with Si(110) sidewalls using <inline-formula><math display="inline" overflow="scroll"><mrow><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math></inline-formula> resist mask by anisotropic wet etching

Abstract

Modification for substrate surface morphology is a kind of ef- fective technique for controlling thin film growth orientation. In this work, continuous V-grooves are fabricated on monocrystalline Si100 sub- strate using TiO2 resist mask by anisotropic wet etching. Influence of thickness of TiO2 resist mask on etching patterns is investigated. The integrity and cross section of V-grooves are observed by laser scanning confocal microscope LSCM and scanning electronic microscopy SEM, respectively. The floccules precipitating in V-grooves are verified by an energy dispersive spectrometer EDS. Results indicate that the Si100 substrate surface is modified to the array of V-grooves along the