Abstract
In this article, simulation, fabrication, and direct current (dc) characterization data are presented for column-based silicon field emitter array (FEA) devices, made using anisotropic or isotropic etching of silicon to form emitter tips. In the design of the fabrication process, we have attempted to minimize spatial nonuniformity of process parameters affecting the geometry of the device structure, and, where possible, counteract the nonuniformity through a proper choice of processing variables. FEA devices, with as many as 232 630 tips, on 4–10 μm centers, have been successfully fabricated. The highest electron emission current measured was over 18 mA at the gate voltage of 150 V for a 6648 tip array.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
