Abstract
Magnetic properties of CoCrPt–SiO 2 films using facing target sputtering system were investigated. CoCrPt–SiO 2/Ru thin films were deposited directly on slide glass substrate and flexible tape substrate (ARAMID) without seed layers in various sputtering conditions aiming for development of CoCrPt–SiO 2 magnetic recording tape media. It was suggested that the Ar gas pressure in fabrication of magnetic layer and underlayer had an influence on magnetic property. Ru (0 0 1) orientation was degraded at high Ar gas pressure in fabrication of underlayer. Longitudinal magnetic recording layer can be fabricated on tape substrate without seed layer. Coercivity and M r/ M s of that film were 4270 Oe and 0.78, respectively.
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