Abstract
The morphous silicon germanium (a-SiGe) thin films are fabricated in a radio frequency plasma enhanced chemical vapor deposition system. This paper summarizes our recent works on how to make a suitable a-SiGe solar cell to enhance the light absorption in the long wavelength region. Up to now, a single junction p-i-n a-SiGe solar cell with an initial efficiency of 9.06% is obtained. The long wavelength response in QE is broadened to 950 nm. The QE reaches about 26.63% at 800 nm wavelength.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
