Abstract
In this study, we investigated AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) with single-metal gate (SMG) and dual-metal gate (DMG) structures through experimental measurements and technology computer-aided design simulation. The DMG structure consists of nickel (Ni) in the source-side gate and titanium (Ti) in the drain-side gate metals for the distribution of an electric field. The measurement results demonstrate that the fabricated AlGaN/GaN DMG–MISHEMT produces improved device performances; this includes higher drain current (ID), higher transconductance (gm), and higher breakdown voltage than the SMG–MISHEMT. The improvement is due to the distribution of an electric field. In addition, in terms of current collapse characteristics, the DMG–MISHEMT exhibited a small change rate in ID at various quiescent bias points. These results mean that a DMG structure leads to excellent electrical characteristics.
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