Abstract
High-quality single quantum wells (SQWs) have been fabricated on GaAs(110) crystal surfaces which were obtained by cleaving GaAs(100) wafers in ultra high vacuum (UHV). The growth interruption was found to prevent the growth of high-quality quantum well structures. The (110)-oriented SQWs grown under appropriate conditions show a very sharp photoluminescence spectrum whose full width at half-maximum (FWHM) is as small as 4.9 meV. The sample showed a strong in-plane polarization angle dependence of the emission intensity, due to the compressive strain in the well layer. The ratio of maximum to minimum values of the polarized PL intensity was 1.6.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
