Abstract
Ordered semiconductor In 2O 3 nanowire arrays embedded in anodic alumina membranes were fabricated by electrodeposition and oxidizing methods. The X-ray diffraction and transmission electron microscopy indicate that the In 2O 3 nanowires with polycrystalline structure are uniformly assembled into the hexagonally ordered nanochannels of the anodic alumina membranes. The optical absorption band edge of In 2O 3 nanowires array exhibits a marked red shift with respect to that of the bulk In 2O 3, and depends on the post-heat treatment temperature. This is attributed to the oxygen vacancy in In 2O 3 nanowires and the interface interactions between the anodic alumina membranes and the In 2O 3 nanowires.
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