Abstract
A test chip using ion-implanted functions for a 16-Mbit bubble memory device has been designed, fabricated and characterized. A new delineation process for ion-implanted tracks using SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ion-implantation masks is effective for reducing defects in minor loops. As a result, a bias margin of 22 Oe was obtained for minor loop bubble propagation. Test chip operation over a wide temperature range, from -25°C to 80°C, has been realized.
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