Abstract
SUMMARYWe have proposed a convenient fabrication technique for a carbon nanotubes (CNTs) transistor. The dip coat method using a metallic solution was employed to deposit metal catalysts of CNTs on the source and drain electrodes on a SiO2‐coated Si substrate at a low temperature. This method does not require a vacuum system or a long process time. After fabricating the CNTs using chemical vapor deposition, we evaluated the morphology of the CNTs using scanning electron microscopy and their electrical properties as a CNT field effect transistor (FET). The CNTs formed bridges between the source and drain electrodes. The field effect mobility of the CNT‐FET was measured to be 3000 cm2/Vs based on the transfer curve. On the basis of the electrical properties, a CNT‐FET with high field effect mobility can be obtained.
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