Abstract
GaN is considered as the material of choice for electromechanical, electronic and optoelectronic applications in the visible/UV regions of the electromagnetic spectrum. However, the lack of an adapted substrate results in a very large density of defects, in particular dislocations, stacking faults and cracks. Under these circumstances, the growth of nanostructures appears as an appealing means of circumventing the problem. In this paper, we describe the fabrication and characterisation of GaN–based nanostructures – cantilevers, microdiscs, photonic crystals, micro and nanowires – grown by metallorganic vapour phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) and fabricated either by a bottom–up or a top–down approach. The applications envisaged at CRHEA will be examined.
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