Abstract
We have demonstrated the enhancement-mode n-channel gallium nitride (GaN) metal-oxide field-effect transistors (MOSFETs) on homoepitaxial GaN substrates using the selective area regrowth and ion implantation techniques. Both types of MOSFETs perform normally off operations. The GaN-MOSFETs fabricated using the regrowth method perform superior characteristics over the other relative devices fabricated using the ion implantation technique. The electron mobility of 100 cm2/V·s, subthreshold of 500 mV/dec, and transconductance of 14 μs/mm are measured in GaN-MOSFETs based on the implantation technique. Meanwhile, the GaN-MOSFETs fabricated using the regrowth method perform the electron mobility, transconductance, and subthreshold of 120 cm2/V s, 18 μs/mm, and 300 mV/dec, respectively. Additionally, the MOSFETs with the regrown p-GaN gate body show the Ion/Ioff ratio of approximately 4 × 107, which is, to our knowledge, among the best results of GaN-MOSFETs to date. This research contributes a valuable information for the design and fabrication of power switching devices based on GaN.
Highlights
Gallium nitride (GaN) possesses such extraordinary characteristics as high breakdown electric field (3 MV/cm) [1], high saturation velocity (1.4 × 107 cm/s) [1], high electron mobility, and good thermal conductivity (~100 W/m·K) [1], emerging as one of the most promising materials for generation power switching devices
The quality of GaN films, treatment of gate dielectrics, structural optimization, and relative fabrication processes are among crucial issues to optimize the n-channel GaN-metal/oxide/semiconductor field-effect transistors (MOSFETs) with the high electron channel mobility, low interface state density, low gate leakage current and large Ion /Ioff properties [11,12,13,14,15,16,17,18,19,20,21]
GaN cannot be formed with an oxides-free pristine interface, pre-deposition surface treatments are defects for as vacancies, vacancy-complexes, resulting in high traps crucial a good nucleation of dielectricinterstitials, layers
Summary
Gallium nitride (GaN) possesses such extraordinary characteristics as high breakdown electric field (3 MV/cm) [1], high saturation velocity (1.4 × 107 cm/s) [1], high electron mobility, and good thermal conductivity (~100 W/m·K) [1], emerging as one of the most promising materials for generation power switching devices. The quality of GaN films, treatment of gate dielectrics, structural optimization, and relative fabrication processes are among crucial issues to optimize the n-channel GaN-MOSFETs with the high electron channel mobility, low interface state density, low gate leakage current and large Ion /Ioff properties [11,12,13,14,15,16,17,18,19,20,21]. During the complicated fabrication process of GaN-MOSFETs prior to the deposition of dielectric layers, p-GaN channels contain significant damages and defects, resulting in higher surface state density than that of general GaN-capacitors. The on/off ratio (Ion /Ioff ) of approximately 4 × 107 obtained in this work is one of the best results to date
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