Abstract
In the present paper a hybrid heterojuction of an organic and inorganic semiconductor junction diode has been proposed. The p-polycarbazole/n-ZnO hybrid-heterojunction (HHJ) diode has been fabricated and characterized. The organic semiconducting polymer has been deposited on the ITO coated glass by electrochemical method followed by deposition of inorganic ZnO semiconductor by vacuum thermal evaporation method. The electrical parameters such as barrier height, ideality factor, rectification ratio and reverse saturation current are extracted from the measured I–V characteristics of the hybrid heterojunction. The proposed hybrid heterojunction exhibits a very low dark current (∼10−11 A) and is therefore expected to have great commercial applications.
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