Abstract
In this article, porous silicon (PS)/copper oxide (CuO) film was prepared by combining electrochemical etching, pulsed laser deposition, and electrochemical deposition approaches for visible light metal-semiconductor-metal photodetector application. A series of PS/CuO photodetectors were fabricated utilizing the corresponding PS/CuO films attended with Pt contact electrodes. X-ray diffraction analysis revealed high crystallinity at a high post-processing temperature, whereas a branchy dendrite-like morphology was perceived using field emission scanning electron microscopy. Moreover, considerable photocurrent and photo-responsivity values were perceived at a high post-processing temperature. In details, the obtained photocurrent and photo-responsivity values for T-350 photodetector were 5.6 μA and 36 mA/W, while the ideality factor and barrier height were 1.6 and 0.87 eV, respectively. The optimal photodetector (T-350) demonstrated an estimated response/recovery time of 800 ms. In addition to the consistency of the proposed device, it offers an easy pathway for optoelectronic design.
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