Abstract
A detailed study of multiphoton lithography (MPL) in arsenic trisulfide (As2S3) films and the effects on nanoscale morphology, chemical networking, and the appearance of the resulting features by the chemical composition, deposition rate, etch processing, and inclusion of an antireflection (AR) layer of As2Se3 between the substrate and the As2S3 layer is reported. MPL was used to photo-pattern nanostructured arrays in single- and multilayer films. The variation in chemical composition for laser-exposed, UV-exposed, and unexposed films is correlated with the etch response, nanostructure formation, and deposition conditions. Reflection of the focused beam at the substrate back into the film produces standing wave interference that modulates the exposure with distance from the substrate and produces nanobead structures. The interference and the modulation can be controlled by the addition of an AR layer of As2Se3 deposited between the substrate and the As2S3 film. Relative to structures produced in a single-layer As2S3 film having no AR layer, photo-patterning in the multilayer As2S3-on-As2Se3 film yields pillar-shaped structures that are closer to the targeted shape and are narrower (120 versus 320 nm), more uniform, and better adhering to the substrate. Processing methods are demonstrated for fabricating large-area arrays with diffractive optical function.
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