Abstract
We fabricated a single hole quantum dot on a AlGaAs/GaAs heterostructure with no intentional doping. The hole quantum dot shows varying charging energy and clear excited states, which suggests that it is in the last-few-hole regime. By changing the confinement of the barrier gates, the device can also be defined as a double quantum dot with tunable interdot coupling.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
