Abstract
Phosphorus‐doped silicon layers have been grown by epitaxy in a system. Doping levels from have been obtained. A combination of measurements of electrical resistivity, Hall mobility, and phosphorus concentration by secondary ion mass spectroscopy has yielded accurate values for the electron mobility and the Hall scattering factor. At the lowest doping levels, the phosphorus concentration is proportional to the partial pressure of phosphine in the reactor, while in the high doping regime the dependence is . The growth rate drops by about 20% at the highest doping levels. The defect densities increase quadratically with phosphorus concentration and reach a value of 3000 cm−2 at .
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