Abstract
This paper reports the effects on the electrical properties of heat treatment in H 2 of Cd 1− y Zn y S (0 ⩽ y⩽0.15) and In-doped CdS (0.25% In). Sprayed films are studied and also the influence of Zn concentration on the layer physical properties. X-ray, SEM and Auger spectroscopy (UHV 10 −10 torr) studies confirmed that the doping is achieved and the physical and electrical properties are improved. It is found that these properties change remarkably when the Zn concentration increases. When crystallization is modified, the activation energy E a of the donor levels increases and the dark resistivity increases. After annealing, the resistivity decreases by about two orders of magnitude for all analyzed samples. This reduction is due to an increase in carrier concentration and Hall mobility and the removal of chlorine and oxygen from the grain boundaries.
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