Abstract
In this letter, we demonstrate the feasibility of a germanium nanowire light emitting diode as a reasonable approach for downscaling of CMOS compatible light sources. We show room-temperature direct bandgap electroluminescence from axial p-n junction nanowire devices. The electron population in the Γ valley, necessary for direct bandgap emission, is achieved by high injection current densities. Carrier temperature is consistently found to be higher than the lattice temperature, indicating inhibited carrier cooling in small diameter wires. Strong polarization of the emission parallel to the nanowire axis is observed and attributed to dielectric contrast phenomena.
Highlights
Fabrication and characterization of a germanium nanowire light emitting diode Johannes Greil,1 Emmerich Bertagnolli,1 Bassem Salem,2 Thierry Baron,2 Pascal Gentile,3 and Alois Lugstein1,a)
we demonstrate the feasibility of a germanium nanowire light emitting diode as a reasonable approach
Carrier temperature is consistently found to be higher than the lattice temperature
Summary
Fabrication and characterization of a germanium nanowire light emitting diode Johannes Greil,1 Emmerich Bertagnolli,1 Bassem Salem,2 Thierry Baron,2 Pascal Gentile,3 and Alois Lugstein1,a).
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