Abstract
Vertical type organic light emitting transistor can perform as electroluminescence device as well as driving transistor. As the light emitting transistor containing vertical deposited configuration can control its own luminescence intensity, the device circuit can be simplified. In the present work, we have fabricated vertical type organic light emitting transistors consisting of Al(source)/C60/Al(gate)/C60/Bphen/TAT:FIrpic/CuPc/ITO(drain)/glass(substrate). TAT(9,10-bis(3",5"-diphenylbiphenyl-4'-yl)anthracene) and FIrpic were used as blue host material and phosphorescent dopant material, respectively. Relatively high radiance and on-off ratio were observed in the device using LiAl metal as source and gate electrodes.
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