Abstract

In this paper, a double piezoelectric layer acceleration sensor based on Li-doped ZnO (LZO) thin film is presented. It is constituted by Pt/LZO/Pt/LZO/Pt/Ti functional layers and a Si cantilever beam with a proof mass. The LZO thin films were prepared by radio frequency (RF) magnetron sputtering. The composition, chemical structure, surface morphology, and thickness of the LZO thin film were analyzed. In order to study the effect of double piezoelectric layers on the sensitivity of the acceleration sensor, we designed two structural models (single and double piezoelectric layers) and fabricated them by using micro-electro-mechanical system (MEMS) technology. The test results show that the resonance frequency of the acceleration sensor was 1363 Hz. The sensitivity of the double piezoelectric layer was 33.1 mV/g, which is higher than the 26.1 mV/g of single piezoelectric layer sensitivity, both at a resonance frequency of 1363 Hz.

Highlights

  • At present, the development of sensor technology has attracted worldwide attention and has been noted as a key technology related to the global economy and scientific and technological progress [1,2,3]

  • Wang et al reported a piezoelectric acceleration sensor based on micro-electro-mechanical system (MEMS) technology, in which ZnO nanowires were grown on cellulose paper as a piezoelectric layer by the hydrothermal method

  • The unammipnilaifituerdizasteinons,itiinvteitgireastiofn,tahnedxe-a, syy,pacnkdagzi-nagx.iAs twtheeresa0m.9e3t,im1.e1, 3th, eapnidez0o.e8l8ecmtriVc c/gonasntadnttohfepcurroess-axial sensitiviZtnyOwiasslilmesistetdh, aannd15it%ca[n32b].e Nenahgaannceodebtyald. orpeipnogrLteidimappuireitzieosel[e2c9t].riIcntuorndaebr lteociampparcoivteorthbeased on double-plaeyrfeorremdanAcelNofththine fidlemvicse., Tahme ureltsi-upliteszosehleocwtriecdlaayleerasktarugcetucrue rhreasntboeefnlersesptohrtaend.5Z×ou10e−t 5aAl. m−2 in presented novel single and triaxis piezoelectric-bimorph accelerometers, which built on parylene

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Summary

Introduction

The development of sensor technology has attracted worldwide attention and has been noted as a key technology related to the global economy and scientific and technological progress [1,2,3]. Wong et al presented large frequency bandwidth ZnO-based single cantilever beam structure acceleration sensors by using radio frequency magnetron sputtering, and the sensitivity reached 363.09 Ω/V [18]. Raaja et al proposed a simple analytical model for deflection, voltage, and charge sensitivity of a ZnO piezoelectric accelerometer based on a cantilever beam structure applied to structural health monitoring, and validated the model under different conditions by the finitMeicerolmeamcheinnest20m19e, 1t0h, 3o3d1. The. As 2s.h1.oBwasnic iSntrFucigtuurere 1, we present two structural models: Single and double piezoelectric layer structures, called model I and model II, respectively. As 2s.h1.oBwasnic iSntrFucigtuurere 1, we present two structural models: Single and double piezoelectric layer structures, called model I and model II, respectively They consist of Pt/Li-doped ZnO (LZO)/Pt/Ti thin filmstsrugcrAtouswressnh,ocowanlnleaidnSmFiOiogdu2e/rSleiI1ca, anwndetmiplreoevdseeelnrtIbIt,ewraeomspsterscuutcibvtuesrltyar.laTmtehoewdyeicltsoh:nSasiinspgtrloeofoaPnftd/mLdia-odsuosbpaleetdpthZienezOoeen(leLdcZ.trOAic)/lPTatyi/Tetrhi in film was plactheidn afislmastgrraonwsnitioonnalSaiyOe2/rStiocaenntisleuvreer tbheaamt thsuebPsttraatne dwiSthiOa2plraoyoef rmsawsseartethbeoenndde. Based on Equation (12), under ideal conditions, theoretical analysis shows that when the thickness of two LZO thin films is equal, Sd should be twice as much as Ss

Fabrication Technology
Sensitivity of the Proposed Sensor

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