Abstract

This work presents the manufacturing and characterization process of two types of transparent conductive oxide (TCO) films, as contacts. Aluminum doped zinc oxide (AZO) deposited with the Sputtering technique and tin doped indium oxide (ITO) using the pyrolysis spray technique, these transparent and conductive films were deposited as contacts on a film of siliconrich oxide (SRO) which was deposited by two systems of chemical vapor deposition by low-pressure (LPCVD) and by hotfilament (HFCVD) on quartz substrates with polysilicon film as metal contact, with the object of building two Metal-InsulatingMetal (MIM) structures, one with SRO-LPCVD film and another SRO-HFCVD thus highlighting the electrical characteristics of these structures. The precursors used for the LPCVD system are silane (SiH4) and nitrous oxide (N2O) and for the HFCVD system the gaseous precursors are obtained from a solid quartz source stripped with atomic hydrogen. First, we present results of the optical characterizations of the TCO´s and SRO films, the band gap obtained by Tauc to calculate the size of the nanocrystal in SRO-films, causing light spots. And I-V curves of MIM structures with interesting results.

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