Abstract
F-centers, generated in mixed single crystals KCl1–xBrx:Pb2+ by gamma radiation exposure in the range of 0.5–30 kGy, were studied in order to elucidate the effect of these defects in the thermally stimulated luminescence emission of the doped crystal. The F-centers were identified by its characteristic F absorption band which was located between 520 and 640 nm, depending on the ion composition in the mixed crystal. The thermoluminescence emission was measured before and after room temperature optical bleaching with F-light and significant effects in the TL glow curve were observed. The results suggested that the defects like F-centers play a very important role in the recombination mechanism responsible for the thermoluminescence emission process. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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