Abstract
Phosphorus (P) doped zinc oxide (ZnO) thin film has skillfully been deposited on flexible substrate using radio frequency sputtering technique at room temperature under controlled oxygen ambient to tune its point defects. P doped ZnO film shows a very high ultraviolet (UV) photosensitivity with responsivity and detectivity values of 23.5 mA/W and 1.86×1013 Jones respectively as compared to the values of 0.073 mA/W and 2.56×1010 Jones respectively for pristine ZnO. Incorporation of P dopant under controlled oxygen ambient results in a very low dark current value due to acceptor-donor compensation leading to an unprecedentedly ultra-high photo-to-dark current ratio of 2.15×105 under 350 nm illumination. A photosensitivity under repetitive flat and bending conditions has been attained. Further, photoresponse towards a low intensity UV illumination of power 29 μW/cm2 has been noted with a photo-to-dark current ratio of 3.88×103 indicating an excellent photodetection efficiency of the P doped ZnO film.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
