Abstract
As device size shrinks smaller, not only random telegraph signal (RTS) noise, which is caused by the trapping and de-trapping of a single carrier but also the degradation of gate oxide due to hot-carrier stress become a serious issue. In this paper, random telegraph signal (RTS) measurements have been used to study individual hot-carrier-induced traps in n-type metal oxide semiconductor field effect transistor (nMOSFETs). Trap depth (xT), lateral location (yT), and trap energy (ECox-ET) of stress-induced traps are founded to be different from those of process-induced traps. Also, we confirmed the hot-carrier stress induced traps are located near drain region.
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