Abstract
As device size shrinks smaller, not only random telegraph signal (RTS) noise, which is caused by the trapping and de-trapping of a single carrier but also the degradation of gate oxide due to hot-carrier stress become a serious issue. In this paper, random telegraph signal (RTS) measurements have been used to study individual hot-carrier-induced traps in n-type metal oxide semiconductor field effect transistor (nMOSFETs). Trap depth (xT), lateral location (yT), and trap energy (ECox-ET) of stress-induced traps are founded to be different from those of process-induced traps. Also, we confirmed the hot-carrier stress induced traps are located near drain region.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.