Extraction of the BSIM3 1/ f noise parameters in CMOS transistors

Abstract

Flicker noise is investigated in a set of transistors issued from a 0.8 μm CMOS technology in order to extract parameters for simulation using BSIM3 (Berkeley Short-channel IGFET Model). The noise model used in BSIM3 is discussed, an appropriate extraction procedure is proposed. Intrinsic channel noise variations versus device biases agree with Hooge’s theory (carrier mobility fluctuations) for p-MOSTs and with Mc Whorter’s theory (carrier number fluctuations) for n-MOSTs. It is shown that for the studied technology two noise parameters (NOIA and NOIB) can model the intrinsic channel noise. For p-MOSTs, NOIA and NOIB are constants and for n-MOSTs NOIA is also a constant while NOIB is inversely proportional to the effective gate voltage. Good agreement between simulation and experimental results is obtained.