Abstract
The luminescence of the 630 nm band in ZnSe single crystals was studied under intracenter excitation (hvex < Eg). We obtained luminescence spectra at different temperatures, temperature dependences of photoluminescence intensity and photoconductivity, lux-ampere and lux-luminescence dependences both at low temperatures, when there is no thermal quenching, and at 270 K, when thermal quenching is observed. Comparing of the photoluminescence spectrum with the X-ray luminescence spectrum has showed that only one component of the 630 nm band with a hole luminescence mechanism is observed in the photoluminescence. Temperature dependences of photoluminescence intensity and photoconductivity indicate that at T > 250 K external quenching of photoluminescence is observed under intracenter excitation. Lux-ampere and lux-luminescent dependences also confirm this conclusion.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
