Abstract
Atomic layer deposition (ALD) with subsequent annealing in N2 gas flow was employed to fabricate an extensive series of both hexagonal and orthorhombic rare-earth manganate RMnO3 thin films using R(thd)3, Mn(thd)3, and ozone as precursors. Excellent control of the R/Mn stoichiometry was achieved for all the rare-earth constituents studied at 275 °C. The formation of the metastable perovskites was elegantly enhanced through depositions on coherent perovskite substrates resulting in a complete series (from R = La to Lu) of single-phase RMnO3 perovskites on LaAlO3 substrates. The magnetic properties of the perovskite series exhibited expected antiferromagnetic behaviour at low temperatures (except for R = La which showed ferromagnetic interactions due to cation vacancies).
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