Abstract
The ability to simulate temperature, dispersion, and soft-breakdown effects as well as a new /spl alpha/ dependence was added to the Chalmers nonlinear model for high electron mobility transistor (HEMT's) and metal semiconductor field-effect transistor (MESFET's). DC, pulsed dc, low frequency (10 Hz-10 MHz), RF, and small signal S-parameter measurements (1-18 GHz) have been made on a large number of commercial HEMT and MESFET devices from different manufacturers in the temperature range 17-400 K in order to evaluate the validity of the model extensions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Microwave Theory and Techniques
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
