Abstract
The possibility of intentionally shifting the high-frequency edge of plateau in the noise spectral density of silicon p-n structures to higher frequencies under irradiation with gamma-ray quanta was studied. The largest increase in the extent of the operating-frequency range was observed to amount to 2–2.5 times. As the irradiation dose increased further, the plateau width did not increase, and its boundary became less abrupt. Correlation between the variation in the effective lifetime of minority charge carriers and the width of low-frequency plateau in the noise spectral density was found. A qualitative model describing the variation in the noise spectral density with increasing irradiation dose for silicon p-n structures with microplasma channels governed by the p-n junction dimensions is suggested.
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