Abstract
PtSi/silicon Schottky barrier detectors and focal plane arrays are important components for the near and medium infrared spectral range. Ir/Si silicon detectors have smaller barriers with response to the 10 - 12 micrometers range, but are difficult to manufacture reliably. An alternate way to extending the spectral response of these detectors is to use a heavier doped substrate, particularly if only a thin surface layer is heavily doped. We have modeled such surface doped Schottky barriers and have calculated the expected photoresponse. Considerable reductions in barrier height are possible while keeping dark currents to a minimum. Experimental results confirm the model.© (1993) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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