Abstract
We have grown bi-layer InAs quantum dots (QDs) on GaAs substrates for extending the emission wavelength of InAs/GaAs QDs beyond 1.3μm. The QD bi-layer, which comprises two QDs layers (seed- and active-QDs) separated with a GaAs spacer layer of 10nm in thickness, exhibits light emission from active-QDs with longer wavelength. An enlargement of the active-QDs occurred by optimizing several growth parameters: growth temperature of seed-QDs, amount of InAs supplied for seed- and active-QDs layers. These optimized parameters lowered the density of the seed-QDs strain spreading upward, which resulted in an enlargement of the active-QDs. We achieved a control of the extension of emission wavelength up to approximately 1.4μm from 1.2μm. These results indicate that the QD bi-layer can be applied to a broadband light source exhibiting an emission spectrum centered at 1.3μm with a bandwidth of 200nm.
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