Abstract
ABSTRACT Diode structures of short wavelength infrared (SWIR) InGaAs material were grown epitaxially on 3 GaAs substrates by molecular beam epitaxy. Despite the large lattice mismatch of 6% between In 0.8 Ga 0.2 As and GaAs the diode performance allows applications in spectroscopy and imaging. Photovoltaic diode characterization measures like R 0 A product and quantum efficiency were extracted from I-V curves. The layers are processed with standard photolithography and micro-structuring tools and finally flip-chip bonded on a silicon read out integrated circuit (ROIC). Linear arrays of 256 and 512 pixel with 25 m pitch were fabricated as well as focal plane arrays (FPA) of 256 x 320 pixel with 30 m pitch. Functionality is proven by using the assemblies in systems for spectroscopy and beam profiling up to 2.5 m wavelength. Keywords: Extended InGaAs, SWIR, Linear array, focal plane array, flip-chip bonding, back-side illumination INTRODUCTION Extended SWIR InGaAs with cut-off wavelength up to 2.5 m finds its application in spectroscopy and imaging. For the spectroscopy of plastics e.g. the characteristic finger print absorption lines are in the area between 1.7 and 2.5 m and could not be seen by standard telecom photodiodes like In
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