Abstract
Polydimethylglutarimide PMGI-based resists are finding increasing use in microelectromechanical systems MEMS as both sacrificial and structural materials. PMGI-based resists are commercially available and were originally designed for use in bilayer lift-off applications. Literature on deep-UV exposure and development of PMGI films is limited to films less than 2.5 m in thickness, and use only tetramethylammonium hydroxide TMAH-based developers. We investigate the exposure and development of PMGI films greater than 6 m in thickness using the two main classes of developer for PMGI, TMAH, and tetraethylammonium hydroxide TEAH-based developers. At these thicknesses, a nonuniform dose through the film due to the optical absorption of the PMGI leads to large gradients in the dissolution properties. We report etch rates as a function of surface dose and development time. Additionally a model is developed to provide a basic predictor of development depth and other important data for fabrication process planning and development.
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