Exponential flux-controlled memristor model and its floating emulator**Project supported by the National Natural Science Foundation of China (Grant Nos. 51377124 and 51221005), the Foundation for the Author of National Excellent Doctoral Dissertation of China (Grant No. 201337), the Program for New Century Excellent Talents in University of China (Grant No. NCET-13-0457), and the Natural Science Basic Research Plan in Shaanxi

Abstract

As commercial memristors are still unavailable in the market, mathematic models and emulators which can imitate the features of the memristor are meaningful for further research. In this paper, based on the analyses of characteristics of the q–φ curve, an exponential flux-controlled model, which has the quality that its memductance (memristance) will keep monotonically increasing or decreasing unless the voltage’s polarity reverses (if not approach the boundaries), is constructed. A new approach to designing the floating emulator of the memristor is also proposed. This floating structure can flexibly meet various demands for the current through the memristor (especially the demand for a larger current). The simulations and experiments are presented to confirm the effectiveness of this model and its floating emulator.