Abstract
Recent advances in oxide-based resistive switching devices have made these devices very promising candidates for future nonvolatile memory applications. However, several key issues remain that affect resistive switching. One is the need for generic alternative electrodes with thermally robust resistive switching characteristics in as-grown and high-temperature annealed states. Here, we studied the electrical characteristics of Ta2O5−x oxide-based bipolar resistive frames for various TaNx bottoms. Control of the nitrogen content of the TaNx electrode is a key factor that governs variations in its oxygen affinity and structural phase. We analyzed the composition and chemical bonding states of as-grown and annealed Ta2O5−x and TaNx layers and characterized the TaNx electrode-dependent switching behavior in terms of the electrode’s oxygen affinity. Our experimental findings can aid the development of advanced resistive switching devices with thermal stability up to 400 °C.
Highlights
A long-standing goal in the development of potential next-generation nonvolatile memory (NVM) devices is to meet the demands of key memory markets, which include high scalability for high density integration and fast operation speed
Capacitance-voltage (C-V) and X-ray photoelectron spectroscopy (XPS) measurements at the interfacial layer demonstrated diverse oxygen affinities, which resulted in discrete switching events
Experimental findings suggest that low oxygen-affinity TaNx electrodes are essential for ensuring thermally stable resistive switching responses in annealed states
Summary
A long-standing goal in the development of potential next-generation nonvolatile memory (NVM) devices is to meet the demands of key memory markets, which include high scalability for high density integration and fast operation speed. Numerous studies have investigated the possibility of using these materials (with manipulation of material thickness[15], electrodes[16,17], heat treatment[18], multi-layer frames[19], and doping20), oxide reactions at the metal electrode/ oxide interfaces in as-grown and annealed states still critically affect the characteristics of resistive switching[21]. This has restricted the choice of electrode because of the requirement for high temperature (~400 °C) at the back end of the line. Experimental findings suggest that low oxygen-affinity TaNx electrodes are essential for ensuring thermally stable resistive switching responses in annealed states
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